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3 mm (T1) LED, Diffused
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Besondere Merkmale
q q q q q
eingefarbtes, diffuses Gehause als optischer Indikator einsetzbar Lotspiee mit Aufsetzebene gegurtet lieferbar Storimpulsfest nach DIN 40839
VEX06710
Features
q q q q q
colored, diffused package for use as optical indicator solder leads with stand-off available taped on reel load dump resistant acc. to DIN 40839
Semiconductor Group
1
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Typ Type
Emissionsfarbe Color of Emission
Gehausefarbe Color of Package
Lichtstarke Luminous Intensity IF = 10 mA IV (mcd) 0.4 ... 1.0 ... 1.6 ... 1.0 ... 3.2 2.0 3.2 8.0
Bestellnummer Ordering Code
LR 3360-DG LR 3360-F LR 3360-G LR 3360-FJ LS 3360-HL LS 3360-K LS 3360-L LS 3360-KN LO 3360-HL LO 3360-K LO 3360-L LO 3360-JM LY 3360-HL LY 3360-K LY 3360-L LY 3360-KN LG 3360-HL LG 3360-J LG 3360-K LG 3360-L LG 3360-KN LP 3360-GK LP 3360-H LP 3360-J LP 3360-HL
red
red diffused
Q62703-Q1316 Q62703-Q1317 Q62703-Q1318 Q62703-Q1319 Q62703-Q1320 Q62703-Q1321 Q62703-Q1322 Q62703-Q1323 Q62703-Q1887 Q62703-Q2400 Q62703-Q2596 Q62703-Q2410 Q62703-Q1324 Q62703-Q1325 Q62703-Q1326 Q62703-Q1998 Q62703-Q3818 Q62703-Q1865 Q62703-Q2008 Q62703-Q3507 Q62703-Q3819 Q62703-Q2467 Q62703-Q2914 Q62703-Q2915 Q62703-Q3213
super-red
red diffused
2.5 ... 20.0 6.3 ... 12.5 10.0 ... 20.0 6.3 ... 50.0 2.5 ... 20.0 6.3 ... 12.5 10.0 ... 20.0 4.0 ... 32.0 2.5 ... 20.0 6.3 ... 12.5 10.0 ... 20.0 6.3 ... 50.0 2.5 ... 20.0 4.0 ... 8.0 6.3 ... 12.5 10.0 ... 20.0 6.3 ... 50.0 1.6 ... 12.5 2.5 ... 5.0 4.0 ... 8.0 2.5 ... 20.0
orange
orange diffused
yellow
yellow diffused
green
green diffused
pure green
green diffused
Streuung der Lichtstarke in einer Verpackungseinheit IV max / IV min 2.0. Luminous intensity ratio in one packaging unit IV max / IV min 2.0.
Semiconductor Group
2
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Grenzwerte Maximum Ratings Bezeichnung Parameter Betriebstemperatur Operating temperature range Lagertemperatur Storage temperature range Sperrschichttemperatur Junction temperature Durchlastrom Forward current Stostrom Surge current t 10 s, D = 0.005 Sperrspannung Reverse voltage Verlustleistung Power dissipation TA 25 C Warmewiderstand Thermal resistance Sperrschicht / Luft Junction / air Symbol Symbol Werte Values LS, LO, LY, LG LR LP C C C 30 mA A - 55 ... + 100 - 55 ... + 100 + 100 40 45 0.5 Einheit Unit
Top Tstg Tj IF IFM
VR Ptot
140
5 100 100
V mW
Rth JA
400
K/W
Semiconductor Group
3
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol LR Wellenlange des emittierten Lichtes(typ.) peak Wavelength at peak emission(typ.) IF = 20 mA Dominantwellenlange(typ.) Dominant wavelength(typ.) IF = 20 mA 660 LS 635 Werte Values LO 610 LY 586 LG 565 LP 557 nm Einheit Unit
dom
645
628
605
590
570
560
nm
Spektrale Bandbreite bei 50 % Irel max(typ.) Spectral bandwidth at 50 % Irel max(typ.) IF = 20 mA Abstrahlwinkel bei 50 % IV (Vollwinkel) Viewing angle at 50 % IV Durchlaspannung(typ.) Forward voltage(max.) IF = 10 mA Sperrstrom(typ.) Reverse current(max.) VR = 5 V Kapazitat(typ.) Capacitance VR = 0 V, f = 1 MHz Schaltzeiten: Switching times: IV from 10 % to 90 %(typ.) IV from 90 % to 10 %(typ.) IF = 100 mA, tP = 10 s, RL = 50 2
35
45
40
45
25
22
nm
70 1.6 2.0
70 2.0 2.6
70 2.0 2.6
70 2.0 2.6
70 2.0 2.6
70 2.0 2.6
Grad deg. V V
VF VF IR IR C0
0.01 0.01 0.01 0.01 0.01 0.01 A 10 10 10 10 10 10 A 25 12 8 10 15 15 pF
tr tf
120 50
300 150
300 150
300 150
450 200
450 200
ns ns
Semiconductor Group
4
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Relative spektrale Emission Irel = f (), TA = 25 C, IF = 20 mA Relative spectral emission V () = spektrale Augenempfindlichkeit Standard eye response curve
100 % rel 80
OHL01698
V
60
red
pure-green green
orange
20
0 400
blue
450
500
550
yellow
40
600
super-red
650
hyper-red
nm
700
Abstrahlcharakteristik Irel = f () Radiation characteristic
Semiconductor Group
5
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Durchlastrom IF = f (VF) Forward current TA = 25 C
Relative Lichtstarke IV/IV(10 mA) = f (IF) Relative luminous intensity TA = 25 C
10 1 V V (10 mA) 10 0 5
OHL02146
10 -1 5 green red yellow super-red orange pure-green
-1
10 -2 5
10 -3 10
5 10
0
5
10
1
mA 10
2
F
Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C LS, LO, LY, LG
Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C LR
Semiconductor Group
6
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Zulassige Impulsbelastbarkeit IF = f (tP) Permissible pulse handling capability Duty cycle D = parameter, TA = 25 C LP
10 3
OHL01686
Maximal zulassiger Durchlastrom Max. permissible forward current IF = f (TA)
F
mA
tP D=
tP
T T
F
D = 0.005 0.01 0.02 0.05 0.1
10 2 0.2
5
0.5 DC
10 1 -5 10
10 -4
10 -3
10 -2
10 -1
Wellenlange der Strahlung peak = f (TA) Wavelength at peak emission IF = 20 mA
10 0 s 10 1 tp
Dominantwellenlange dom = f (TA) Dominant wavelength IF = 20 mA
Semiconductor Group
7
1998-07-13
LR 3360, LS 3360, LO 3360 LY 3360, LG 3360, LP 3360
Durchlaspannung VF = f (TA) Forward voltage IF = 10 mA
Relative Lichtstarke IV/IV(25 C) = f (TA) Relative luminous intensity IF = 10 mA
Mazeichnung Package Outlines
(Mae in mm, wenn nicht anders angegeben) (Dimensions in mm, unless otherwise specified)
Area not flat
0.6 0.4 0.7 0.4 0.8 0.4
4.8 4.4 2.7 2.1 3.4 3.1
2.54 mm spacing
1.1 0.9
1.8 1.2 29.0 27.0
3.7 3.5 6.1 5.7
0.6 0.4
Collector/ Cathode
Chip position
GEX06710
Kathodenkennzeichnung: Cathode mark:
Kurzerer Lotspie Short solder lead
Semiconductor Group
8
o2.9 o2.7
1998-07-13

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